III - V Compound Semiconductors

Progress in Antimonide Based III-V Compound Semiconductors and Devices

In recent years, the narrow bandgap antimonide based compound semiconductors (ABCS) are widely regarded as the first candidate materials for fabrication of the third generation infrared photon detectors and integrated circuits with ultra-high speed and ultra-low power consumption. Due to their unique bandgap structure and physical properties, it makes a vast space to develop various novel devic...

Integration of GaAsP based III-V compound semiconductors to silicon technology

Aalto University, P.O. Box 11000, FI-00076 Aalto www.aalto.fi Author Henri Jussila Name of the doctoral dissertation Integration of GaAsP based III-V compound semiconductors to silicon technology Publisher School of Electrical Engineering Unit Department of Microand Nanosciences Series Aalto University publication series DOCTORAL DISSERTATIONS 135/2014 Field of research Semiconductor materials ...

Dry Etching Technologies of Optical Device and III-V Compound Semiconductors

Dry etching is one of the elemental technologies for the fabrication of optical devices. In order to obtain the desired shape using the dry etching process, it is necessary to understand the reactivity of the materials being used to plasma. In particular, III-V compound semiconductors have a multi-layered structure comprising a plurality of elements and thus it is important to first have a full...

Theory of ferromagnetic (III,Mn)V semiconductors

The body of research on (III,Mn)V diluted magnetic semiconductors initiated during the 1990’s has concentrated on three major fronts: i) the microscopic origins and fundamental physics of the ferromagnetism that occurs in these systems, ii) the materials science of growth and defects and iii) the development of spintronic devices with new functionalities. This article reviews the current status...

Ferromagnetism in (III,Mn)V Semiconductors